Silicon carbide manufacturing process - GAB Neumann
1. Powder preparation. Silicon carbide (SiC) is a compound of silicon and carbon with a chemical formula of SiC. The simplest manufacturing process for producing silicon carbide is to coine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1600°C (2910°F) and 2500°C (4530°F).